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Laboratory for Optics and Heterostructures with Extreme Two-dimensionality

Invited researcher Bernard Gil
Contract number
14.W03.31.001
Time span of the project
2017-2019

As of 30.01.2020

20
Number of staff members
45
scientific publications
General information

Name of the project: Optics of crystals and heterostructures with extreme two-dimensionality

Strategy for Scientific and Technological Development Priority Level: а


Goals and objectives

Research directions:

Optics of crystals and heterostructues with extreme two-dimensionality including those formed by molecular-beam epitaxy

Project objective:

Developing physics of semiconductive systems with extreme two-dimensionality in tens of optical phenomena connected with zone structure, spin, valley and excitonic states, interface connections and possible plasma excitations in layers of multilayer thickness, as well as discovering effects that are potentially useful in nanophotonics and optoelectronics.


The practical value of the study

  • A method has been developed to measure spectrums of polarized photoluminescence with micron spatial dimensions including when applying outer magnetic field
  • We have detected electronic and excitonic spectrums as well as maximally attainable quantum output of radiation of pyroelectric quantum wells of A3-nitride compounds depending on thickness and chemical composition of layers and polarity.
  • Spectrums of electron states have been described for states localized A3-nitride quantum wells of monolayer thickness
  • We have developed a method to form A3-nitride heterostructures with 2D-inclustions and nanocolumnar A3-nitride heterostructures of «core/2D-layer» type by molecular-beam epitaxy
  • Our researchers have obtained results of optical, spectroscopic, and structural research of A3-nitride heterostructures with 2D-inclustions and nanocolumnar A3-nitride heterostructures of «core/2D-layer» type
  • We have developed a method to form A2-chalcogenides with 2D-inclusions and controlled packaging defects density
  • The Laboratory has researched semiconductive 2D-structures with stretched structural defects
  • Our staff have evaluated optical and spin phenomena in semiconductive 2D-systems determined by absence of symmetry inversions and presence of strong spin-orbit interaction as well as Bragg van der Waals strictures based on 2D-monolayers
  • We have described optical and vibration of layered of 2D-crystals of boron nitride of various isotope compositions
  • We have described electrophysical qualities of accumulating 2D-layers in A3-nitride compounds

Education and career development:

  • We have conducted the «2D semiconductive systems»    international winter school on semiconductor physics (Russia, 2018)
  • 1 doctoral dissertation and 3 candidate dissertations have been defended

Other results: Results of our research have been presented in 15 keynotes at Russian and international conferences

Collaborations:

Nagoya University (Japan), University of Toulouse (France), University of Valencia (Spain), TU Dortmund (Germany), University of Montpelier (France): joint research and publications

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Vuong T.Q.P., Liu S., Van der Lee A., Cuscó R., Artús L., Michel T., Valvin P., Edgar J. H., Cassabois G., Gil B.
Isotope Engineering of van der Waals Interactions in Hexagonal Boron Nitride. Nature Materials 17(2) (2017).
Smirnov D.S., Belyaev K.G., Kirilenko D.A., Nestoklon M.O., Rakhlin M.V., Toropov A.A., Sedova I.V., Sorokin S.V., Ivanov S.V., Gil B., and Shubina T.V.
Exciton Bound to 1D Intersections of Stacking Fault Planes with a ZnSe Quantum Well. Physica Status Solidi (RRL) – Rapid Research Letters 12(3): 1700410 (2018).
Poshakinskiy A.V., Kazanov D.R., Shubina T.V., Tarasenko S.A.
Optical Activity in Chiral Stacks of 2D Semiconductors. Nanophotonics 7(4): 753–762 (2018).
Komissarova T.A., Kampert E., Law J., Jmerik V.N., Paturi P., Wang X., Yoshikawa A., and Ivanov S.V.
Electrical Properties of Surface and Interface Layers of the N- and In-polar Undoped and Mg-doped InN Layers Grown by PA MBE. Applied Physical Letters 112: 022104 (2018).
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